K. Hieke et al., BALLISTIC TRANSPORT AND GATE CONTROL MECHANISM IN DEEPLY ETCHED ELECTRON-WAVE-GUIDE BASED DEVICES, Solid-state electronics, 42(7-8), 1998, pp. 1115-1119
We prepared In0.53Ga0.47As/InP electron waveguides with in-plane side
gates by deep etching through a two-dimensional electron gas. In these
structures we investigated the conductance dependent on the voltages
applied at both gales. Our experiments show a remarkable asymmetry in
the gate efficiency: negative gate voltages seem to be more efficient
than positive ones, end the pinch-off voltage of the waveguide depends
mainly on the more negative sf the two gate voltages. A model is give
n which takes the etched surfaces into account. The conductance in the
waveguide is essentially determined by the potentials at the etched s
urfaces, which are via Schottky-diode transitions coupled with the gat
es and the channel. With the help of this model we are able to explain
the behavior of the electron waveguides. (C) 1998 Elsevier Science Lt
d. All rights reserved.