FAR-INFRARED CYCLOTRON-RESONANCE STUDY OF THE EFFECT OF STRAIN AND LOCALIZATION IN SI SIGE 2-DIMENSIONAL ELECTRON GASES/

Authors
GRIFFIN N ARNONE DD PAUL DJ PEPPER M ROBBINS DJ CHURCHILL AC
Citation
N. Griffin et al., FAR-INFRARED CYCLOTRON-RESONANCE STUDY OF THE EFFECT OF STRAIN AND LOCALIZATION IN SI SIGE 2-DIMENSIONAL ELECTRON GASES/, Solid-state electronics, 42(7-8), 1998, pp. 1159-1163
Citations number
33
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
7-8
Year of publication
1998
Pages
1159 - 1163
Database
ISI
SICI code
0038-1101(1998)42:7-8<1159:FCSOTE>2.0.ZU;2-L
Abstract
Far infrared cyclotron resonance measurements have been used to invest igate the effective mass (m) in the strained silicon channel of modul ation-doped, two dimensional electron gases grown on relaxed Si1-xGex. Samples with germanium fractions from 24% to 31% were measured to inv estigate the influence of strain on m. Little variation as a function of strain was observed, but for one sample, the resonance position wa s shifted up in frequency due to localisation effects. This persisted up to higher Landau level filling factors than has been observed previ ously in other materials systems and was accompanied by a large enhanc ement in the quantum lifetime. (C) 1998 Elsevier Science Ltd. All righ ts reserved.