BREAKDOWN OF QUANTUM HALL-EFFECT IN 2-DIMENSIONAL ELECTRON-SYSTEM WITH ANTIDOT ARRAYS

Citation
T. Sanuki et al., BREAKDOWN OF QUANTUM HALL-EFFECT IN 2-DIMENSIONAL ELECTRON-SYSTEM WITH ANTIDOT ARRAYS, Solid-state electronics, 42(7-8), 1998, pp. 1165-1167
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
42
Issue
7-8
Year of publication
1998
Pages
1165 - 1167
Database
ISI
SICI code
0038-1101(1998)42:7-8<1165:BOQHI2>2.0.ZU;2-N
Abstract
We have investigated the influence of antidot arrays on the breakdown of quantum Hall effect (QHE) in GaAs/AlGaAs heterostructures. In the s amples without antidots: the value of the critical current remarkably decrease with increasing electron densities by illumination. In the sa mples with antidot arrays, the critical current still keeps its high v alue at relatively high electron density after illumination. These res ults indicate that the antidots can act as artificial potential fluctu ations and modify the current distribution in QHE regime. (C) 1998 Els evier Science Ltd. All rights reserved.