Y. Ohno et al., V = 1 BILAYER QUANTUM HALL STATE AT ARBITRARY ELECTRON-DISTRIBUTION IN A DOUBLE-QUANTUM-WELL, Solid-state electronics, 42(7-8), 1998, pp. 1183-1185
We demonstrate unique characteristics of the correlated v = 1 bilayer
quantum Hall state in a GaAs/AlGaAs double quantum well. By controllin
g the total electron density as well as the distribution of electrons
in the wells, we measured the magnetoresistance and the Hail resistanc
e especially at around v = 1. The plateau width of the v = 1 quantum H
all state is used to estimate the stability of the stale and found to
be sensitive only to the total electron density, and almost independen
t of the ratio of electrons between two layers. These experimental dat
a can be interpreted as the existence of incompressible bilayer v = 1
quantum Hall state at any ratio. The impact of the findings on the pos
sibility of observing interlayer quantum coherence, which is theoretic
ally predicted, is also discussed. (C) 1998 Published by Elsevier Scie
nce Ltd. All rights reserved.