INFRARED INDUCED EMISSION FROM SILICON QUANTUM WIRES

Authors
BAGRAEV NT CHAIKINA EI GEHLHOFF W KLYACHKIN LE MARKOV II MALYARENKO AM
Citation
Nt. Bagraev et al., INFRARED INDUCED EMISSION FROM SILICON QUANTUM WIRES, Solid-state electronics, 42(7-8), 1998, pp. 1199-1204
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
7-8
Year of publication
1998
Pages
1199 - 1204
Database
ISI
SICI code
0038-1101(1998)42:7-8<1199:IIEFSQ>2.0.ZU;2-V
Abstract
Studies of infrared induced emission from the silicon quantum wires, w hich is due to the formation of a correlation gap in the DOS of degene rate hole gas, ale presented. The quantum wires of this art are create d by electrostatic confining potential inside ultra-shallow p(+)n junc tions which are realized using controlled surface injection of self-in terstitials and vacancies in the process of non-equilibrium boron diff usion. (C) 1998 Elsevier Science Ltd. All rights reserved.