TRANSPORT CHARACTERIZATION OF GAAS QUANTUM DOTS CONNECTED WITH QUANTUM WIRES FABRICATED BY SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY

Authors
KUMAKURA K MOTOHISA J FUKUI T
Citation
K. Kumakura et al., TRANSPORT CHARACTERIZATION OF GAAS QUANTUM DOTS CONNECTED WITH QUANTUM WIRES FABRICATED BY SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(7-8), 1998, pp. 1227-1231
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
7-8
Year of publication
1998
Pages
1227 - 1231
Database
ISI
SICI code
0038-1101(1998)42:7-8<1227:TCOGQD>2.0.ZU;2-E
Abstract
We fabricated novel quantum nanostructures where the quantum dots are connected with quantum wires using metalorganic vapor phase epitaxy (M OVPE) on (001) GaAs masked substrates. In particular a GaAs single ele ctron transistor was successfully fabricated and its transport propert ies were investigated. We prepared two devices which have artificially designed two- or three-prominences in the channel region. These promi nences produced a quantum clot connecting with quantum wires in applyi ng the gate voltage. By comparing the electrical properties of the two devices, we discussed a model for formation of quantum dot and tunnel ing barriers in the channel. (C) 1998 Elsevier Science Ltd. All rights reserved.