ELECTRON-STATES, MAGNETOTRANSPORT AND CARRIER DYNAMICS IN MODULATION-DOPED V-GROOVE QUANTUM WIRES

We report electrical transport and photoluminescence measurements of m odulation-doped GaAs/AlGaAs V-groove quantum wires. Magneto-resistance measurements clearly indicate that transport occurs through the botto m layer in wide structures, whereas sidewall quantum wells may contrib ute in the case of narrow structures. Strong anisotropy of the photolu minescence clearly identifies quantum wire recombination. The energy o f this state is strongly dependent on the incident laser power, increa sing with increasing energy, and pinning at the energy of the sidewall quantum well. The considerably reduced quantum wire electron-hole rec ombination rate obtained from time-resolved photoluminescence measurem ents, together with the density-dependence of the energy suggest that electron-hole separation occurs during the relaxation process. (C) 199 8 Elsevier Science Ltd. All rights reserved.