MULTIPHONON PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN SEMICONDUCTOR QUANTUM DOTS

Citation
Vm. Fomin et al., MULTIPHONON PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN SEMICONDUCTOR QUANTUM DOTS, Solid-state electronics, 42(7-8), 1998, pp. 1309-1314
Citations number
28
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
42
Issue
7-8
Year of publication
1998
Pages
1309 - 1314
Database
ISI
SICI code
0038-1101(1998)42:7-8<1309:MPARIS>2.0.ZU;2-3
Abstract
Multiphonon optical spectra of semiconductor quantum dots, in particul ar, of nanocrystals with structure imperfections, are studied in the f ramework of a non-adiabatic approach. The phonon modes and the amplitu des of the electron-phonon interaction are found taking into account b oth electrostatic and mechanical boundary conditions, as well as the f inite number of vibrational degrees of freedom in quantum dots. Select ion rules for Raman scattering are deduced for quantum dots of semicon ductor materials with a degenerate valence band. The effects of non-ad iabaticity of the exciton-phonon system are shown to lead to a signifi cant enhancement of phonon-assisted transition probabilities and to a substantial difference of the optical spectra from the Franck-Condon p rogression. Calculated optical spectra compare well with experimental data on photoluminescence and Raman scattering in CdSe and PbS quantum dots. (C) 1998 Elsevier Science Ltd. All rights reserved.