ANOMALOUS EXCITATION INTENSITY DEPENDENCE OF PHOTOLUMINESCENCE FROM INAS SELF-ASSEMBLED QUANTUM DOTS

Authors
MOTOHISA J BAUMBERG JJ HEBERLE AP ALLAM J
Citation
J. Motohisa et al., ANOMALOUS EXCITATION INTENSITY DEPENDENCE OF PHOTOLUMINESCENCE FROM INAS SELF-ASSEMBLED QUANTUM DOTS, Solid-state electronics, 42(7-8), 1998, pp. 1335-1339
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
7-8
Year of publication
1998
Pages
1335 - 1339
Database
ISI
SICI code
0038-1101(1998)42:7-8<1335:AEIDOP>2.0.ZU;2-6
Abstract
We have studied photoluminescence (PL) from single InAs self-assembled quantum dots (QDs) by micro-PL measurements and, in particular, studi ed the excitation intensity dependence. We have found strong quenching in both the peak and integrated intensity of narrow PL lines when the excitation power was increased. This suggests that the present behavi or is mainly due to the change of carrier screening and relaxation bet ween the InAs wetting layer and InAs QDs. (C) 1998 Elsevier Science Lt d. All rights reserved.