HOPPING TRANSPORT IN MULTIPLE-DOT SILICON SINGLE-ELECTRON MOSFET

The transport properties in multiple-dot single electron MOSFETs have been investigated by numerical calculation solving the master equation . In multiple-dot single electron devices, the capacitive coupling eff ects play an important role in the electron transport. The calculation shows that the transport in the multiple-dot system is governed by th e phonon assisted hopping if the single electron charging energy and c oupling energy are larger than the thermal energy. The result is in go od agreement with the experimental results of silicon narrow channel M OSFETs and confirms the hopping transport model in the multiple-dot sy stem we proposed in our previous paper. (C) 1998 Elsevier Science Ltd. All rights reserved.