M. Yamaguchi et al., DELOCALIZATION AND MOBILITY OF ELECTRONS AT THE RESONANCE OF GROUND-STATES IN A COUPLED DOUBLE-QUANTUM-WELL STRUCTURE, Solid-state electronics, 42(7-8), 1998, pp. 1553-1556
The transport of photo-excited electrons in a p-type GaAs/AlGaAs doubl
e quantum well is analyzed with the femtosecond time-of-flight method.
It is shown that the mobility at the resonance is higher than that at
the off-resonance, which is attributed to the decrease of interface-r
oughness scattering due to the delocalization of the electronic wavefu
nction. Numerical results based on a model interface-roughness potenti
al show a qualitative agreement with the experimental observation. (C)
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