FABRICATION OF GATE-ALL-AROUND MOSFET BY SILICON ANISOTROPIC ETCHING TECHNIQUE

A novel fabrication process of gate-all-around (GAA) MOSFETs using an anisotropic etching technique has been proposed. In this technology, t he channel width of the GAA device is not limited by the lithography r esolution and the density of the wire channel is doubled. The two-dime nsional device simulation shows much better short channel immunity of GAA devices than that of single gate and double gate SOI MOSFETs. The simulation also shows that the new GAA devices we have proposed have h igher current drivability than the conventional GAA and single gate SO I devices. (C) 1998 Elsevier Science Ltd. All rights reserved.