M. Watanabe et al., EPITAXIAL-GROWTH OF NANOMETER-THICK CAF2 CDF2 HETEROSTRUCTURES USING PARTIALLY-IONIZED BEAM EPITAXY/, Solid-state electronics, 42(7-8), 1998, pp. 1627-1630
We propose a technique for growing a multilayered superlattice consist
ing of several monolayers of CaF2/CdF2 on a Si(lll) substrate using a
partially ionized beam technique at 50 degrees C. This technique shoul
d be suitable for use in Si based quantum effect devices using CaF2, C
dF2, and CoSi2 heterostructures on a Si substrate. Ionization and acce
leration were performed for CaF2 evaporation to reduce the required gr
owth temperature using a partially ionized CaF2 molecular beam generat
ed by electron bombardment. The surface morphology and sharpness of th
e heterointerface were improved by the proposed technique as demonstra
ted by atomic force microscopy; the lattice image of transmission elec
tron microscopy and satellite peaks of X-ray diffractometory. (C) 1998
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