EPITAXIAL-GROWTH OF NANOMETER-THICK CAF2 CDF2 HETEROSTRUCTURES USING PARTIALLY-IONIZED BEAM EPITAXY/

We propose a technique for growing a multilayered superlattice consist ing of several monolayers of CaF2/CdF2 on a Si(lll) substrate using a partially ionized beam technique at 50 degrees C. This technique shoul d be suitable for use in Si based quantum effect devices using CaF2, C dF2, and CoSi2 heterostructures on a Si substrate. Ionization and acce leration were performed for CaF2 evaporation to reduce the required gr owth temperature using a partially ionized CaF2 molecular beam generat ed by electron bombardment. The surface morphology and sharpness of th e heterointerface were improved by the proposed technique as demonstra ted by atomic force microscopy; the lattice image of transmission elec tron microscopy and satellite peaks of X-ray diffractometory. (C) 1998 Elsevier Science Ltd. All rights reserved.