TRANSIENT-BEHAVIOR AND LOW V-DS HYSTERESIS IN PD SOI MOSFETS

The floating-body configuration of PD SOI MOSFETs gives rise to both s tatic and dynamic effects, that can strongly affect the performance of PD SOI circuits. In this work we present an experimental characteriza tion of the transient behavior of these devices and of its dependence on the impact ionization regime at the drain end. The same transients also affect the static parameter extraction giving rise to a transient hysteresis in the low V-DS region of the DC characteristics. (C) 1998 Elsevier Science Ltd. All rights reserved.