THE ELECTRICAL-PROPERTIES OF AL NI/GE/N-GAAS INTERFACES/

An Al(130 nm)/Ni(30 nm)/Ge(40 nm) layer deposited onto n-type GaAs by thermal evaporation was electrically studied. The electrical propertie s of these contacts were characterized by current-voltage curves and c ontact noise measurements. The samples have been annealed for differen t times at different temperatures in flowing forming gas, H-2:N-2 (50% :95%), in a tube furnace. The I-V characteristics of the AlNiGe sample s annealed at different temperatures show Schottky character. The I-V plots of the samples that had high noise indexes show a double slope s tructure. (C) 1998 Elsevier Science Ltd. All rights reserved.