Pho. Rappl et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY PB1-XSNXTE LAYERS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1, Journal of crystal growth, 191(3), 1998, pp. 466-471
Lead tin telluride epitaxial layers with tin concentrations covering t
he whole compositional range have been grown by molecular beam epitaxy
on cleaved BaF2 (1 1 1) substrates, using PbTe and SnTe solid sources
. The full width at half maximum of the (2 2 2) rocking curve of these
samples, measured by a four crystal high resolution X-ray diffraction
apparatus, was about 400 arcsec for the ternary layers, and 150 arcse
c for the binary samples. Low temperature Hall mobilities decreased fr
om 5 x 10(5) V cm(2)/s, for PbTe, to 2 x 10(3) V cm(2)/s for SnTe, alt
hough the crystalline quality is approximately the same. This decrease
in mobility is a consequence of the increase in hole concentration fr
om 2 x 10(17) cm(-3) to 2 x 10(20) cm(-3), when the Sn concentration c
hanges from 0 to 100%. This high carrier concentration in the samples
with high Sn content showed a large Burstein-Moss shift in the infrare
d transmission spectra measured between 77 and 300 K. (C) 1998 Elsevie
r Science B.V. All rights reserved.