CHARACTERIZATION OF ATOMIC HYDROGEN-ETCHED HGCDTE SURFACES

Authors
ZIEMER KS STINESPRING CD HIRSCH LS MYERS TH
Citation
Ks. Ziemer et al., CHARACTERIZATION OF ATOMIC HYDROGEN-ETCHED HGCDTE SURFACES, Journal of crystal growth, 191(3), 1998, pp. 594-598
Citations number
16
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
191
Issue
3
Year of publication
1998
Pages
594 - 598
Database
ISI
SICI code
0022-0248(1998)191:3<594:COAHHS>2.0.ZU;2-Y
Abstract
Thermally produced atomic hydrogen is shown to remove both oxides and the Te overlayer left by Br-based etches. While, rface HgTe depletion occurs, the surface is suitable for subsequent epitaxial growth as dem onstrated by the growth of single-crystal CdTe with atomically smooth surfaces. Preliminary device results demonstrate that atomic hydrogen cleaning may be viable for low-temperature HgCdTe processing. (C) 1998 Elsevier Science B.V. All rights reserved.