PHOTO-ENHANCED CHEMICAL-VAPOR-DEPOSITION - SYSTEM-DESIGN CONSIDERATIONS

ArF excimer laser-enhanced photochemical vapor deposition of Si from S i2H6 in an UHV deposition chamber has been used to achieve Si epitaxy at temperatures as low as 250-degrees-C. The system design criteria ar e discussed. Modified Schimmel etching/Nomarski microscopy, transmissi on electron microscopy, and reflection high energy electron diffractio n have been used to study the microstructure of Si films as a function of laser power, substrate temperature and disilane partial pressure. The growth rates were observed to be linearly dependent on laser inten sity and Si2H6 partial pressure. The morphology of the films is excell ent and defects such as dislocation loops and stacking faults are not seen.