HIGH-QUALITY, HIGH DEPOSITION RATE SIO2-FILMS AT LOW-TEMPERATURES USING SILICON FLUORIDES AND PLASMA-ASSISTED DEPOSITION TECHNIQUES

High quality SiO2 films have been deposited by the plasma enhanced che mical vapor deposition technique using SiF4 and N2O. It has been deter mined that a small amount of hydrogen is needed to reduce the amount o f residual fluorine atoms in the oxide improving the structural and el ectrical properties of the film. Using SiH4 as a source of hydrogen in stead of H-2 results in a high deposition rate increasing from 7 to mo re than 500 A/min depending on the total content of SiH4. However, for the high deposition rates studied, hydrogen related impurities start to appear and some degradation of the electrical characteristics of th e films are observed.