VAPOR-DEPOSITION OF PARYLENE-F BY PYROLYSIS OF DIBROMOTETRAFLUORO-P-XYLENE

Citation
L. You et al., VAPOR-DEPOSITION OF PARYLENE-F BY PYROLYSIS OF DIBROMOTETRAFLUORO-P-XYLENE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 3047-3052
Citations number
17
Categorie Soggetti
Physics, Applied
ISSN journal
07342101
Volume
11
Issue
6
Year of publication
1993
Pages
3047 - 3052
Database
ISI
SICI code
0734-2101(1993)11:6<3047:VOPBPO>2.0.ZU;2-I
Abstract
Structural characteristics of poly(tetrafluoroparaxylylene) (PA-F) fil ms deposited directly from C6H4(CF2Br)2 precursor have been studied us ing Fourier transform infrared spectroscopy (FTIR) and x-ray photoelec tron spectroscopy (XPS). Zn was used as the catalyst and the vapor pyr olysis of precursor was carried out between 350 and 400-degrees-C. It is shown that the FTIR and XPS spectra of the PA-F films deposited fro m the precursor are comparable to those made from the conventional dim er route. Dissociation of the PA-F films does not occur up to an annea ling temperature of 500-degrees-C. Both Zn and Br contaminants were ob served in the XPS spectra. However, we found that the Br contamination disappears after annealing to an elevated temperature (greater-than-o r-equal-to 350-degrees-C), while Zn impurities still remain in the fil m.