This paper reviews the instrumentation advances for x-ray microanalysi
s 1991-1997, with particular emphasis on energy dispersive x-ray spect
rometers. Most developments have been aimed at improved convenience an
d reliability while offering sensitivity well below 1 keV, particularl
y for semiconductor applications. Although EDX technology matured duri
ng the 1980's, previous methods of characterisation are now inadequate
to reveal the variability in performance as a function of x-ray energ
y in this low energy region. Furthermore, at low beam voltages where K
lines are not excited, computer processing of peak overlaps is the on
ly way to obtain element intensities. In this situation, detector and
electronic stability and reproducibility have to be substantially impr
oved in order to achieve results anywhere near the limit of statistica
l precision.