EPMA DETERMINATION OF ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS

Authors
CHALDYSHEV VV TRETYAKOV VV
Citation
Vv. Chaldyshev et Vv. Tretyakov, EPMA DETERMINATION OF ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS, Mikrochimica acta (1966), 1998, pp. 187-189
Citations number
9
Categorie Soggetti
Chemistry Analytical
Journal title
Mikrochimica acta (1966) → ACNP
ISSN journal
00263672
Year of publication
1998
Supplement
15
Pages
187 - 189
Database
ISI
SICI code
0026-3672(1998):<187:EDOAEI>2.0.ZU;2-O
Abstract
Arsenic excess in low temperature grown GaAs (LT GaAs) was determined by EPMA. This excess varied from 0.4 to 1.5 at.% for LT GaAs films gro wn under various conditions. The EPMA data were compared with independ ent results from x-ray diffraction and optical studies. The most impor tant errors of EPMA were investigated.