MONTE-CARLO SIMULATION OF HEMT BASED ON SELF-CONSISTENT METHOD

Device simulation of HEMT (High Electron Mobility Transistor) has been carried out by ensemble Monte Carlo simulation, where two-dimensional motion of electrons confined in GaAs region at GaAs/AlGaAs heterointe rface is taken into account, In order to develop a realistic device si mulator of HEMT, we divide the channel region in meshes, and Schroding er and Poisson equations are solved self-consistently to obtain electr onic states of the two-dimensional electrons in a mesh. In addition th e real space transfer from GaAs layer into AlGaAs barrier layer is tak en into account.