SIMULATION OF A SINGLE-ELECTRON TUNNEL TRANSISTOR WITH INCLUSION OF INELASTIC MACROSCOPIC QUANTUM TUNNELING OF CHARGE

We simulated a Single Electron Tunnel (SET) Transistor with the full i nclusion of inelastic macroscopic quantum tunneling of charge (q-MQT) or co-tunneling. Numerical results of the q-MQT effect over a wide ran ge of bias and gate voltage were achieved. A Monte Carlo method was us ed to simulate electrons that tunnel back and forth through the two tu nnel junctions of the SET transistor and co-tunnel back and forth thro ugh both junctions simultaneously. Resonances in the I-V characteristi c were found. The resonant peaks decrease with increasing temperature. The origin of this resonance is the q-MQT or co-tunnel effect in cont rast with the normal resonant tunneling in double barriers.