A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN SILICON NMOSFET INVERSION-LAYERS

Authors
SHIH WK JALLEPALLI S YEAP CF RASHED M MAZIAR CM TASCH AF
Citation
Wk. Shih et al., A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN SILICON NMOSFET INVERSION-LAYERS, VLSI design (Print), 6(1-4), 1998, pp. 53-56
Citations number
14
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
VLSI design (Print) → ACNP
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
53 - 56
Database
ISI
SICI code
1065-514X(1998)6:1-4<53:AMSOEI>2.0.ZU;2-U
Abstract
Monte Carlo simulations of uniform silicon nMOSFET inversion layers ha ve been performed. Excellent agreement between the simulated and exper imental transport characteristics has been observed in the region of s trong inversion at both 300K and 77K. The contribution to the effectiv e mobility due to individual subbands has been analyzed and qualitativ ely explained.