MACROSCOPIC DEVICE SIMULATION OF INGAAS INP BASED AVALANCHE PHOTODIODES/

In this paper, we analyze, based on a two-dimensional drift-diffusion simulation, how variations in the structural components of an InGaAs/I nP separate absorption, grading, charge, and multiplication photodiode (SAGCM) alter its performance. The model is employed in conjunction w ith experimental measurements to enhance the understanding of the devi ce performance. Calibration of the model to the material system and gr owth technique is performed via the analysis of a simpler, alternate s tructure. Excellent agreement between the calculated results and exper imental measurements of the breakdown voltage, dark current, mesa punc hthrough voltage, photoresponse, and gain are obtained.