HYDRODYNAMIC DEVICE MODELING WITH BAND NONPARABOLICITY

Authors
CAI J CUI HL LENZING EH PASTORE R RHODES DL PERLMAN BS
Citation
J. Cai et al., HYDRODYNAMIC DEVICE MODELING WITH BAND NONPARABOLICITY, VLSI design (Print), 6(1-4), 1998, pp. 181-183
Citations number
4
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
VLSI design (Print) → ACNP
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
181 - 183
Database
ISI
SICI code
1065-514X(1998)6:1-4<181:HDMWBN>2.0.ZU;2-2
Abstract
A semiconductor device model based on a set of quantum mechanically de rived hydrodynamic balance equations are presented. This model takes f ull account of band nonparabolicity, in addition to its other useful f eatures such as the explicit evaluation of momentum and energy relaxat ion rates, in the form of frictional force and energy loss rate, withi n the model, and inclusion of carrier-carrier interaction effects, suc h as dynamical screening. Numerical results of one-dimensional device simulations are presented and compared with parabolic approximations.