A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN STRAINED SI SIGE HETEROSTRUCTURES/

Authors
RASHED M SHIH WK JALLEPALLI S ZAMAN R KWAN TJT MAZIAR CM
Citation
M. Rashed et al., A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN STRAINED SI SIGE HETEROSTRUCTURES/, VLSI design (Print), 6(1-4), 1998, pp. 213-216
Citations number
10
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
VLSI design (Print) → ACNP
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
213 - 216
Database
ISI
SICI code
1065-514X(1998)6:1-4<213:AMSOEI>2.0.ZU;2-U
Abstract
Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. Th e study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, ''fitted bands'', representing the features of a realistic ener gy bandstructure. The investigation includes the study of low- and hig h-field electron transport characteristics at 77 K and 300 K. Single p article MC simulations are performed for a strained silicon nMOS struc ture at room temperature. Both calculations show saturation of mobilit y enhancement in strained silicon beyond germanium mole fraction of 0. 2.