MONTE-CARLO AND HYDRODYNAMIC SIMULATION OF A ONE-DIMENSIONAL N(-N-N(+) SILICON DIODE())

Authors
MUSCATO O PIDATELLA RM FISCHETTI MV
Citation
O. Muscato et al., MONTE-CARLO AND HYDRODYNAMIC SIMULATION OF A ONE-DIMENSIONAL N(-N-N(+) SILICON DIODE()), VLSI design (Print), 6(1-4), 1998, pp. 247-250
Citations number
7
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
VLSI design (Print) → ACNP
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
247 - 250
Database
ISI
SICI code
1065-514X(1998)6:1-4<247:MAHSOA>2.0.ZU;2-H
Abstract
An improved closure relation - based on the entropy principle - is imp lemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the ''benchmark'' n(+)- n - n(+) submicron silic on diode is simulated and the quality of the model is assessed by comp arison with Monte Carlo results.