Wc. Liang et al., A NEW SELF-CONSISTENT 2D DEVICE SIMULATOR BASED ON DETERMINISTIC SOLUTION OF THE BOLTZMANN, POISSON AND HOLE-CONTINUITY EQUATIONS, VLSI design (Print), 6(1-4), 1998, pp. 251-256
LDD MOSFET simulation is performed by directly solving the Boltzmann T
ransport Equation for electrons, the Hole-Current Continuity Equation
and the Poisson Equation self-consistently. The spherical harmonic exp
ansion method is employed along with a new Scharfetter-Gummel like dis
cretization of the Boltzmann equation. The solution efficiently provid
es the distribution function, electrostatic potential, and the hole co
ncentration for the entire 2-D MOSFET.