3-DIMENSIONAL HYDRODYNAMIC MODELING OF MOSFET DEVICES

Authors
KERR DC GOLDSMAN N MAYERGOYZ ID
Citation
Dc. Kerr et al., 3-DIMENSIONAL HYDRODYNAMIC MODELING OF MOSFET DEVICES, VLSI design (Print), 6(1-4), 1998, pp. 261-265
Citations number
10
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
VLSI design (Print) → ACNP
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
261 - 265
Database
ISI
SICI code
1065-514X(1998)6:1-4<261:3HMOMD>2.0.ZU;2-F
Abstract
The hydrodynamic (HD) model of semiconductor devices is solved numeric ally in three-dimensions (3-D) for the MOSFET device. The numerical in stabilities of the HD model are analyzed to develop a stable discretiz ation. The formulation is stabilized by using a new, higher-order disc retization for the relaxation-time approximation (RTA) term of the ene rgy-balance (EB) equation. The developed formulation is used to model the MOSFET.