ANALYSIS AND SIMULATION OF EXTENDED HYDRODYNAMIC MODELS - THE MULTI-VALLEY GUNN OSCILLATOR AND MESFET SYMMETRIES

Authors
CHEN GQ JEROME JW SHU CW
Citation
Gq. Chen et al., ANALYSIS AND SIMULATION OF EXTENDED HYDRODYNAMIC MODELS - THE MULTI-VALLEY GUNN OSCILLATOR AND MESFET SYMMETRIES, VLSI design (Print), 6(1-4), 1998, pp. 277-282
Citations number
12
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
VLSI design (Print) → ACNP
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
277 - 282
Database
ISI
SICI code
1065-514X(1998)6:1-4<277:AASOEH>2.0.ZU;2-A
Abstract
We introduce a novel two carrier hydrodynamic model, which incorporate s higher dimensional geometric effects into a one dimensional model. W e study (1) the GaAs device in the notched oscillator circuit, and, (2 ) a MESFET channel, and its symmetries. We present new mathematical re sults for a reduced model.