TRANSIENT ANALYSIS OF SILICON DEVICES USING THE HYDRODYNAMIC MODEL

Authors
COLALONGO L VALDINOCI M GNUDI A RUDAN M
Citation
L. Colalongo et al., TRANSIENT ANALYSIS OF SILICON DEVICES USING THE HYDRODYNAMIC MODEL, VLSI design (Print), 6(1-4), 1998, pp. 283-286
Citations number
5
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
VLSI design (Print) → ACNP
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
283 - 286
Database
ISI
SICI code
1065-514X(1998)6:1-4<283:TAOSDU>2.0.ZU;2-K
Abstract
The analysis of the switching behaviour of submicron devices brings ab out the necessity of extending the solution of the hydrodynamic model to the transient case. The implementation of such model has been carri ed out and a few examples of simulation are presented here, showing th e velocity-overshoot of a ballistic diode and the temperature spread i n the drain region of a realistic MOS device.