NEW APPROACH TO HOT-ELECTRON EFFECTS IN SI-MOSFETS BASED ON AN EVOLUTIONARY ALGORITHM USING A MONTE-CARLO LIKE MUTATION OPERATOR

We introduce a new approach to hot electron effects in Si-MOSFETs, bas ed on a mixture of evolutionary optimization algorithms and Monte Carl o technique. The Evolutionary Algorithm searchs for electron distribut ions which fit a given goal, for example a measured substrate current and in this way can calculate backwards electron distributions from me asurement results. The search of the Evolutionary Algorithm is directe d toward physically correct distributions by help of a Monte Carlo lik e mutation operator. Results for bulk-Si demonstrate the correctness o f the physical model in the Monte Carlo like mutation operator and the backward calculation ability of the Evolutionary Algorithm. First res ults for Si-MOSFETs are qualitatively comparable to results of a Full Band Monte Carlo simulation.