CORRECTIONS TO THE CAPACITANCE BETWEEN 2 ELECTRODES DUE TO THE PRESENCE OF QUANTUM-CONFINED SYSTEM

Authors
Citation
M. Macucci et K. Hess, CORRECTIONS TO THE CAPACITANCE BETWEEN 2 ELECTRODES DUE TO THE PRESENCE OF QUANTUM-CONFINED SYSTEM, VLSI design (Print), 6(1-4), 1998, pp. 345-349
Citations number
9
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
ISSN journal
1065514X
Volume
6
Issue
1-4
Year of publication
1998
Pages
345 - 349
Database
ISI
SICI code
1065-514X(1998)6:1-4<345:CTTCB2>2.0.ZU;2-7
Abstract
We have studied the capacitance between two parallel plates enclosing a quantum confined system and its dependence on the applied voltage. T he concepts of capacitance and differential capacitance are discussed together with their applicability to systems characterized by single-e lectron tunneling. We determine the tunneling thresholds by means of a formalism based on the minimization of the system free energy and we retrieve, as a special case, Luryi's quantum capacitance formula. We a pply our method to the study of an idealized system made up of a numbe r of quantum dots with random size distributed according to a gaussian , Results are shown for different choices of the position of the dots between the plates and of the voltage span applied to perform the meas urement of the differential capacitance.