THE COMBINATION OF EQUIPMENT SCALE AND FEATURE SCALE MODELS FOR CHEMICAL-VAPOR-DEPOSITION VIA A HOMOGENIZATION TECHNIQUE

In the context of semiconductor manufacturing, chemical vapor depositi on (CVD) denotes the deposition of a solid from gaseous species via ch emical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reacti on-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface, The surface is given i n general parameterized form. A homoganization technique from asymptot ic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results fro m a mathematical test problem are included.