REDUCED DAMAGE REACTIVE ION ETCHING PROCESS FOR FABRICATION OF INGAASP INGAAS MULTIPLE-QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS/

The damage introduced into an InGaAs/InGaAsP quantum well structure du ring CH4/H-2 reactive ion etching (RIE) processes was measured, for pl asma powers from 20 to 100 W, using low temperature photoluminescence. The damage depth profile is estimated to be around 12-70 nm after ann ealing at 500 degrees C for 60 s using a rapid thermal annealer. A red uced damage RIE process has been developed to fabricate InGaAs/lnGaAsP multiquantum well ridge waveguide lasers. The performance of these la sers has been compared to that of lasers fabricated from the same epil ayer using wet etching to form the ridge. The resultant threshold curr ents were essentially indistinguishable, being 44.5 and 43 mA, respect ively, for dry and wet etched lasers with 500 mu m long laser cavities . (C) 1998 American Vacuum Society.