WIDELY CHANGING PROBABILITY OF SURFACE DAMAGE CREATION INDUCED BY A SINGLE-ION IN THE MEV ION ENERGY-RANGE

Citation
H. Ogiso et al., WIDELY CHANGING PROBABILITY OF SURFACE DAMAGE CREATION INDUCED BY A SINGLE-ION IN THE MEV ION ENERGY-RANGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1914-1918
Citations number
15
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
4
Year of publication
1998
Pages
1914 - 1918
Database
ISI
SICI code
1071-1023(1998)16:4<1914:WCPOSD>2.0.ZU;2-U
Abstract
We report widely changing probability of surface damage creation induc ed by a single ion on highly oriented pyrolytic graphite specimens, ea ch implanted with 3.1 MeV Si, Cu, As, Sr, Ag, or Au ions at a dose of 1.9x10(11) cm(-2). By using a friction force microscope, we observed l attice disordered surface damage, and found the probability of surface damage creation varying from 0.02 to 0.54 depending on the variation in the ion species. To determine the reason for the larger dependence on ion species, we calculated the probabilities of knock-on atom gener ation by nuclear collision. The calculated probability of knock-on ato m generation agreed well with the observed probability of surface dama ge creation. (C) 1998 American Vacuum Society.