H. Ogiso et al., WIDELY CHANGING PROBABILITY OF SURFACE DAMAGE CREATION INDUCED BY A SINGLE-ION IN THE MEV ION ENERGY-RANGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1914-1918
We report widely changing probability of surface damage creation induc
ed by a single ion on highly oriented pyrolytic graphite specimens, ea
ch implanted with 3.1 MeV Si, Cu, As, Sr, Ag, or Au ions at a dose of
1.9x10(11) cm(-2). By using a friction force microscope, we observed l
attice disordered surface damage, and found the probability of surface
damage creation varying from 0.02 to 0.54 depending on the variation
in the ion species. To determine the reason for the larger dependence
on ion species, we calculated the probabilities of knock-on atom gener
ation by nuclear collision. The calculated probability of knock-on ato
m generation agreed well with the observed probability of surface dama
ge creation. (C) 1998 American Vacuum Society.