STRUCTURAL AND ELECTRICAL-PROPERTIES OF CHEMICAL-VAPOR-DEPOSITION TUNGSTEN OVERGROWTH ON PHYSICAL VAPOR-DEPOSITED AND METALORGANIC CHEMICAL-VAPOR-DEPOSITED TIN ADHESION LAYERS

Authors
PENG YC CHEN LJ HSIEH WY YANG YR HSIEH YF
Citation
Yc. Peng et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF CHEMICAL-VAPOR-DEPOSITION TUNGSTEN OVERGROWTH ON PHYSICAL VAPOR-DEPOSITED AND METALORGANIC CHEMICAL-VAPOR-DEPOSITED TIN ADHESION LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2013-2018
Citations number
14
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
4
Year of publication
1998
Pages
2013 - 2018
Database
ISI
SICI code
1071-1023(1998)16:4<2013:SAEOCT>2.0.ZU;2-Q
Abstract
The structure and electrical properties of chemical vapor deposited W (CVD-W) films on various physical vapor deposited or metalorganic chem ical vapor deposited TN films have been investigated. The growth orien tations of the TiN adhesion layers were controlled by deposition metho d and film thickness. The growth orientations of CVD-W films were foun d to depend strongly on the microstructures of TN. The grain sizes and electrical resistivity of CVD-W were found to increase and decrease, respectively, with the grain sizes of underlying TiN layers. (C) 1998 American Vacuum Society.