Rw. Ryan et al., SIDE-BY-SIDE WAFER BONDING OF INP FOR USE WITH STEPPER-BASED LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2110-2112
We have developed a simple technique for wafer bonding for use with st
epper-based lithography. The technique involves side-by-side bonding o
f two or more pieces of a wafer together with epoxy. A bonded wafer wi
th the same dimensions, such as thickness, flatness, and position of t
he large flat, as a whole wafer can be run on a stepper. Since a stepp
er can align each field independently, all of the area without the act
ual bond may be patterned. This technique is quite useful for salvagin
g a broken wafer in the middle of processing. In addition, it may be u
sed for bonding several substrates of different materials together for
monolithic integration. (C) 1998 American Vacuum Society.