SIDE-BY-SIDE WAFER BONDING OF INP FOR USE WITH STEPPER-BASED LITHOGRAPHY

Citation
Rw. Ryan et al., SIDE-BY-SIDE WAFER BONDING OF INP FOR USE WITH STEPPER-BASED LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2110-2112
Citations number
3
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
4
Year of publication
1998
Pages
2110 - 2112
Database
ISI
SICI code
1071-1023(1998)16:4<2110:SWBOIF>2.0.ZU;2-1
Abstract
We have developed a simple technique for wafer bonding for use with st epper-based lithography. The technique involves side-by-side bonding o f two or more pieces of a wafer together with epoxy. A bonded wafer wi th the same dimensions, such as thickness, flatness, and position of t he large flat, as a whole wafer can be run on a stepper. Since a stepp er can align each field independently, all of the area without the act ual bond may be patterned. This technique is quite useful for salvagin g a broken wafer in the middle of processing. In addition, it may be u sed for bonding several substrates of different materials together for monolithic integration. (C) 1998 American Vacuum Society.