TUNGSTEN SILICIDE AND TUNGSTEN POLYCIDE ANISOTROPIC DRY ETCH PROCESS FOR HIGHLY CONTROLLED DIMENSIONS AND PROFILES

Authors
BASHIR R KABIR AE HEBERT F BRACKEN C
Citation
R. Bashir et al., TUNGSTEN SILICIDE AND TUNGSTEN POLYCIDE ANISOTROPIC DRY ETCH PROCESS FOR HIGHLY CONTROLLED DIMENSIONS AND PROFILES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2118-2120
Citations number
5
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
4
Year of publication
1998
Pages
2118 - 2120
Database
ISI
SICI code
1071-1023(1998)16:4<2118:TSATPA>2.0.ZU;2-Z