SOFT-X-RAY EMISSION STUDIES OF THE BULK ELECTRONIC-STRUCTURE OF ALN, GAN, AND AL0.5GA0.5N

Authors
SMITH KE DUDA LC STAGARESCU CB DOWNES J KORAKAKIS D SINGH R MOUSTAKAS TD GUO JH NORDGREN J
Citation
Ke. Smith et al., SOFT-X-RAY EMISSION STUDIES OF THE BULK ELECTRONIC-STRUCTURE OF ALN, GAN, AND AL0.5GA0.5N, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2250-2253
Citations number
24
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
4
Year of publication
1998
Pages
2250 - 2253
Database
ISI
SICI code
1071-1023(1998)16:4<2250:SESOTB>2.0.ZU;2-Q
Abstract
The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has bee n studied using synchrotron radiation excited soft x-ray emission spec troscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree well with calculations. T he shift in energy of the valence band maximum as x varies from 0 to 1 in AlxGa1-xN was measured by recording N K-emission spectra, and foun d to be linear. Furthermore, N K-emission spectra revealed resonantlik e hybridization of N 2p and Ga 3d states at 19 eV below the GaN valenc e band maximum. The spectral intensity of this feature is proportional to Ga content. (C) 1998 American Vacuum Society.