L. Haworth et al., FORMATION OF AN SB-N COMPOUND DURING NITRIDATION OF INSB(001) SUBSTRATES USING ATOMIC NITROGEN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2254-2260
The effect of atomic nitrogen, generated by a radio frequency plasma s
ource, on clean InSb(001) at 275 degrees C has been studied using x-ra
y photoelectron spectroscopy (XPS) and resonant Raman scattering (RRS)
. Chemically shifted XPS features of the Sb 3d region revealed the for
mation of a reacted Sb species. This reacted Sb was unambiguously iden
tified as mainly Sb-N by comparison with results from as deposited and
nitrided, thick elemental Sb layers on InSb. The Sb 3d feature due to
this Sb-N species was found to have a chemical shift of 1.65+/-0.10 e
V to higher binding energy compared with the InSb peak, while for the
elemental Sb the shift was only 0.45+/-0.10 eV in the same direction.
Although not obvious from the XPS data the RRS spectra of a much longe
r nitridation at 275 degrees C showed the presence of crystalline elem
ental Sb. Annealing studies of elemental Sb and nitrided Sb layers sho
wed the Sb-N species to be significantly less volatile than elemental
Sb. (C) 1998 American Vacuum Society.