INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS

Authors
WAKAYA F MATSUBARA T NAKAYAMA M YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation
F. Wakaya et al., INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2313-2316
Citations number
10
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
4
Year of publication
1998
Pages
2313 - 2316
Database
ISI
SICI code
1071-1023(1998)16:4<2313:ISIIGB>2.0.ZU;2-6
Abstract
Density and level of interface states are accompanied by growth interr uption, which is inevitable in an in situ process using molecular beam epitaxy (MBE). This MBE process coupled with focused ion beam systems is investigated by means of the Hall measurements and capacitance-vol tage measurements. The experimental results are compared to those of t he self-consistent calculation. These results suggest that interface s tates are located at a shallow level from the conduction band edge. (C ) 1998 American Vacuum Society.