NATIVE EXTENDED DEFECTS IN ZN1-YGDYSE INXGA1-XAS HETEROSTRUCTURES/

Authors
MULLER B HEUN S LANTIER R RUBINI S PAGGEL JJ SORBA L BONANNI A LAZZARINO M BONANNI B FRANCIOSI A NAPOLITANI E ROMANATO F DRIGO A BONARD JM GANIERE JD LAZZARINI L SALVIATI G
Citation
B. Muller et al., NATIVE EXTENDED DEFECTS IN ZN1-YGDYSE INXGA1-XAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2334-2341
Citations number
48
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
4
Year of publication
1998
Pages
2334 - 2341
Database
ISI
SICI code
1071-1023(1998)16:4<2334:NEDIZI>2.0.ZU;2-1
Abstract
Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricate d by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the str uctural properties of the resulting II-VI/III-V heterostructures and d iscuss the distribution of native defects, including misfit and thread ing dislocations, stacking faults, and surface corrugations, (C) 1998 American Vacuum Society.