Bz. Nosho et al., STRUCTURE OF INAS ALSB/INAS RESONANT-TUNNELING DIODE INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2381-2386
We have used in situ plan-view scanning tunneling microscopy to study
the surfaces and interfaces within an InAs/AlSb/InAs resonant tunnelin
g diodelike structure grown by molecular beam epitaxy. The nanometer a
nd atomic-scale morphologies of the surfaces have been characterized f
ollowing a number of different growth procedures. When InAs(001)-(2 x
4) is exposed to Sb-2 a bilayer surface is produced, with 1 monolayer
(ML) deep (3 Angstrom) vacancy islands covering approximately 25% of t
he surface. Both layers exhibit a (1 x 3)-like reconstruction characte
ristic of an InSb-like surface terminated with >1 ML Sb, indicating th
at there is a significant amount of Sb on the surface. When 5 ML of Al
Sb is deposited on an Sb-terminated InAs surface, the number of layers
observed on each terrace increases to three. Growth of an additional
22 ML of InAs onto the AlSb layer, followed by a 30 s interrupt under
Sb-2, further increases the number of surface layers observed. The roo
t-mean-square roughness is found to increase at each subsequent interf
ace; however, on all the surfaces the roughness is less than or equal
to 2 Angstrom. The surface roughness is attributed to a combination of
factors, including reconstruction-related stoichiometry differences,
kinetically limited diffusion during growth, and lattice-mismatch stra
in. Possible methods to reduce the roughness are discussed. (C) 1998 A
merican Vacuum Society.