DEVELOPMENT OF ION AND ELECTRON DUAL FOCUSED BEAM APPARATUS FOR HIGH-SPATIAL-RESOLUTION 3-DIMENSIONAL MICROANALYSIS OF SOLID MATERIALS

We constructed an ion and electron dual focused beam apparatus to deve lop a novel. three-dimensional (3D) microanalysis technique. In this m ethod, a Ga focused ion beam (Ga FIB) is used as a tool for successive cross sectioning of the sample in the ''shave-off'' mode, while an el ectron beam(EB) is used as a primary probe for Auger mapping of the cr oss sections. Application of postionization with EB to Ga-FIB secondar y ion mass and two-dimensional (2D) elemental mapping with Ga-FIB-indu ced Auger electrons are also in the scope of the apparatus. The 3D mic roanalysis was applied to a bonding wire on an integrated circuit (IC) . A series of EB-induced sample current images of the successive cross sections were obtained as a function of the cross-sectioning position . This result showed the capability to realize the 3D Auger microanaly sis. Two-dimensional elemental mapping with Ga-FIB-induced Auger elect rons was realized for the first time on the IC surface. Its applicabil ity to surface analysis was evaluated. (C) 1998 American Vacuum Societ y.