CURRENT STATUS OF SINGLE-ION IMPLANTATION

The current status of single ion implantation (SII) which has been pro posed as a novel technology to suppress the fluctuation in dopant numb er in fine semiconductor structures is reported. The key to control th e ion number is to detect secondary electrons (SEs) emitted from a tar get upon ion incidence. By improving the SE detection system, we have achieved the efficiency of 90% which ensures the reduction in the fluc tuation of dopant number to 30% compared to the conventional ion impla ntation. The improvement for the better SE detection efficiency has tu rned out to also be effective for the precise beam alignment. The sing le ion incident position can now be successfully controlled with an er ror of less than 0.3 mu m. (C) 1998 American Vacuum Society.