DYNAMIC MONTE-CARLO SIMULATION FOR DEPTH PROFILING BY ION-SPUTTER ETCHING - APPLICATION TO THE ALAS GAAS MULTILAYERED SYSTEM/

We present a dynamical simulation approach by Monte Carlo calculation to describe atomic mixing phenomena in depth profiling of multilayered systems. This approach is based on the binary encounter model, taking into account (1) generation of both the interstitial atoms and vacanc ies and (2) annihilation of the vacancies. The results indicate that t he simulation describes very well the depth profiles of AlAs/GaAs mult ilayered systems obtained by Auger electron spectroscopy. It predicts the existence of preferential sputtering of Al in the AlAs layer, wher e the Auger intensity of the As (MVV-32 eV) in the AlAs layer is about 1.2 times larger than that of the GaAs layer for 0.5 keV Ar+ sputteri ng. (C) 1998 American Vacuum Society.