EFFECTS OF INTERMEDIATE SEMICONDUCTOR LAYERS ON CARRIER TRANSPORT MECHANISMS THROUGH P-ZNSE METALS INTERFACES/

The effects of formation of intermediate semiconductor layers at p-ZnS e/metals interfaces on carrier transport mechanisms were studied by co mparing contacts prepared by the deposition and annealing (DA) techniq ue or the molecular beam epitaxy (MBE) technique. Current density vs v oltage (J-V) curves of the MBE contact with a p-ZnSe/p-ZnTe superlatti ce intermediate layer showed ohmic behavior. However, J-V curves of th e DA contact with a ZnTe intermediate layer showed rectifying behavior . The difference of the electrical properties: between these two conta cts was due to existence of a highly resistive intermediate layer with highly dense defects in the DA contact and a low resistance,p-type co nductive intermediate layer with relatively small densities of crystal line defects in the MBE contacts. From the present results, it was con cluded that formation of the highly resistive semiconductor layer with dense crystalline defects prevented the DA contact to transit from no n-ohmic J-V behavior to ohmic.